安跃华，女，校聘副教授，博士，硕士生导师。2017年7月获北京邮电大学博士学位，师从唐为华教授。长期从事光电材料与器件方面的研究工作，主要致力于宽禁带半导体薄膜、复合薄膜结构以及半导体异质结光电器件的研究。相关成果在Photonics Research,Adv. Mater. Interfaces, Nanotechnology, Appl. Phys. Lett., Appl. Surf. Sci. J. Phys. D: Appl. Phys., J. Alloys Compd., Mater. Lett., J. Nanopart. Res., RSC Adv., J. Nanosci. Nanotechnol.等杂志上发表SCI收录文章50余篇，其中第一作者或通信作者10余篇，被引近900次，获得相关发明专利3项，H指数16。主持国家自然科学基金青年项目1项，主持广东技术师范大学人才引进启动项目1项。
研究领域：
1.宽禁带半导体Ga2O3薄膜的物性研究。
2.表面等离激元复合Ga2O3基薄膜光电探测器的研究。
3.Ga2O3基薄膜异质结光电探测器的研究。
主要成果：
1.Y. H. An, Z. S. Gao, Y. Guo, S. H. Zhang, Z. Liu, and W. H. Tang, Oneε-Ga2O3-based solar-blind Schottky photodetector emphasizing high photocurrent gain and photocurrent-intensity linearity[J].Chin. Phys. B, 32, 5, 058502 (2023).
2.Y. H. An, X. Shen, Y. Y. Zhang, D. Liu, Y. Wu, P. F. Guo*, W. C. Zhou, and Y. Y. Hao, Color-tunable photoluminescence and whispering gallery mode lasing of Alloyed CsPbCl3(1–x)Br3xmicrostructures [J].Adv. Mater. Interfaces, 1902126 (2020).
3.Z. Gao, Z. Deng, L. Zhang, X. Gao,Y. An, A. Wang, and Y. Qin, 10 Gb/s classical secure key distribution based on temporal steganography and private chaotic phase scrambling[J].Photonics Res., 12, 2, 321-330 (2024).
4.X. Shen, L. L. Zhang, L. J. Liu,Y. H. An*, Z. S. Gao, and P. F. Guo, Bipolar resistive switching of Pt/Ga2O3−x/SiC/Pt thin film with ultrahigh OFF/ON resistance ratios [J].Nanotechnology.31, 225206 (2020).
5.Z. Gao,Y. H. An*, A. Wang, P. Li, Y. Qin, Y. Wang, and X. Wang, 40Gb/s secure optical communication based on symbol-by-symbol optical phase encryption[J].IEEE Photon. Technol. Lett., 32:14 (2020).
6.Y. H. An, D. Y. Guo, S. Y. Li, Z. P. Wu, Y. Q. Huang, P. G. Li, L. H. Li, and W. H. Tang*, Influence of oxygen vacancies on the photoresponse ofβ-Ga2O3/SiCn-ntype heterojunctions [J].J. Phys. D: Appl. Phys.,49, 285111(2016).
7.Y. Hao, X. Wang, andY. H An*,AGa2O3/AlN heterojunction for self-powered solar-blind photodetection with high photo-to-dark current ratio and fast response speed [J].Phys. Scr., 96, 125835(2021).
8.Y. H. An, Z. P. Wu, X. L. Chu, D. Y. Guo, X. C. Guo, L. H. Li, P. G. Li, H. Tang, W. H. Tang*. Composition tuning of rectifying polarity of colloidal CdS1-xSexnanocrystal-based devices [J].J. Nanopart. Res.,17, 119(2015).
9.Y. H. An, D. Y. Guo, Z. M. Li, Z. P. Wu, Y. S. Zhi, W. Cui, X. L. Zhao, P. G. Li, W. H. Tang*, Dual-band photodetector with a hybrid Au- nanoparticles/β-Ga2O3structure [J].RSC Adv.,6, 66924 (2016).
10.Y. H. An, Y. Xing, J. Song, P. G. Li, S. L. Wang, A. P. Liu, Z. Y. Zhu, and W. H. Tang*. Optoelectronic Properties of CdSe0.75S0.25Nanocrystals Assembled Into Micro-Electrodes [J].J. Nanosci. Nanotechnol.,13, 8 (2013).
11.Y. H. An, X. L. Chu, Y. Q. Huang, Y. S. Zhi, D. Y. Guo, P.G. Li, Z. P. Wu, W. H. Tang*. Au plasmon enhanced high performanceβ-Ga2O3Solar-blind photo-detector [J].Prog. Nat. Sci.,26, 1 (2016).
12.Y. H. An, Y. S. Zhi, W. Cui, X. L. Zhao, Z. P. Wu, D. Y. Guo, P. G. Li, and W. H. Tang*, Thickness tuning photoelectric properties ofβ-Ga2O3thin film based photodetectors [J].J. Nanosci. Nanotechnol.,Vol. 17, 1–4, 2017.
13.Y. H. An, Y. S. Zhi, Z. P. Wu, W. Cui, X. L. Zhao, D. Y. Guo, P. G. Li, W. H. Tang*,Deep ultraviolet photodetectors based onp-Si/i-SiC/n-Ga2O3heterojunction by inserting thin SiC barrier layer [J].Appl Phys A, 122, 1036(2016).
14.Y. H. An, X. Shen, Y. Y Hao, P. F. Guo, and W. H. Tang*, Enhanced resistance switching of Ga2O3thin films by ultraviolet radiation [J].J. Nanosci. Nanotechnol.,1-4, 20 (2020).
15.安跃华,熊必涛,邢云,申婧翔,李培刚*,朱志艳,唐为华.外电场作用下ZnO分子的结构特性研究[J].物理学报Acta Phys. Sin.,62, 073103 (2013).
联系方式：
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